It is established that additional alloying of silicon with nickel at a temperature of T=1100÷1200°C, allows to provide rather high thermal stability of its electric parameters in the range of temperatures of T=450÷1200°C. Clusters of impurity nickel atoms in the silicon lattice act as active centers that suppress the generation of thermal donors and other recombination centers. Using the EDS energy dispersion X-ray spectroscopy method, the composition of clusters of impurity nickel atoms consisting of silicon atoms 51,61% and nickel 48,39% was determined.