In this work, the effect of ytterbium impurity on the formation of radiation defects under electron irradiation is investigated. It is shown that the presence of ytterbium atoms slowsdown the process of radiation defect formation: the concentration of A–and E–centers in the n-Si samples is much lower than in the controlsamples. It was found that the efficiency of the formation of radiation defects depends on the concentration of the Yb impurity, its state in the lattice, and the content of oxygen atoms in silicon