EFFECTS OF PRESSURE ON OXYGEN CONCENTRATION IN SILICON SINGLE CRYSTALS

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20 апрел 2023

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EFFECTS OF PRESSURE ON OXYGEN CONCENTRATION IN SILICON SINGLE CRYSTALS

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Technical science and innovation

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Study the residual effects after all-round hydrostatic pressure (AHP) of the original and doped with nickel and gadolinium silicon samples, and study the effect of all-round hydrostatic compression on the relaxation characteristics of metal-semiconductor structures fabricated based on crystalline silicon with different resistivity. It has been shown that in n-Si with AHP up to 40 kbar will not change the peaks of oxygen and carbon absorption, while in n-Si at P≥30 kbar, the oxygen and carbon absorption peaks gradually decrease and completely disappear at pressure of P=55 kbar; in n-Si, the absorption spectra turned out to be more resistant to external pressure. In the range from 12 kbar to 38 kbar, n-Si sample under the influence of pressure had nonmonotonic change in resistivity, with the formation of a maximum at P ≥ 35 kbar, which is associated with impurity precipitates by two acceptor levels (Ev+0.2 eV and Ec–0.4 eV). The experimentally observed non-monotonicity in the dependences ρ=f (P) is consequence of two counter processes. Mechanical stresses that stimulate the gettering of thermal defects from the bulk of the semiconductor or impurities localized in the metal-semiconductor transition layer and interacting with surface states can be responsible for changing the properties of the interface under pressure.

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# oxygen# carbon# diffusion# silicon# hydrostatic pressure# infrared spectrophotometer# active atoms

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https://eroi.uz/11.0008/A0423-0004

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