logo
calendar27 феврал 2024
view1
Asosiy til:O'zbek

Lazer nurlari bilan shakllantirilgan kremniy nanoklasterlarini SiO2/Si tizimining elektrofizik xossalariga ta’siri

Fan yo'nalishi:
pdf

65ddd33a13451.pdf

PDF

MAQOLA ANNOTATSIYASI

quote
Maqolada lazer nurlari bilan nurlantirilgan oksidlanmagan namunalar katodolyuminesentsiya spektrida 2,25 eV foton energiyali cho‘qqi paydo bo‘lishi aniqlandi. SiO2/Si tizim katodolyuminesentsiya spektrida yangi turdagi oksid qatlam hosil bo‘lishi tufayli qo‘shimcha spektral cho‘qqi paydo bo‘lishi, lazer nurlari bilan nurlantirilgan SiO2/Si tizim volt-amper xarakteristikasining teskari sohasida me’yoriy holatdan chetlashuvchi bog'liqlik borligi aniqlandi.

MUALIFLAR

Teglar

# lazer nurlari# katodolyuminesentsiya# oksid qatlam# volt-amper xarakteristika

Maqolani baholang

0

0 ta

Maqola idintifikatorlari

Foydalanilgan adabiyotlar

1. Вейко В.П., Дышловенко С.С., Скворцов А.М. Лазерное микроструктурирование поверхности кремния // Научно-технический сборник «Диагностика и функциональный контроль качества оптических материалов». – СПб: СПбГУ ИТМО, 2004. – Ч. 2. – С. 138–153.

2. Serano Justin R. and David G. Cahil. Micron-scale buckling of SiO2 on Si // Appl. Phis. – 2002. – V. 92. – P. 7606–7610.

3. Скворцов А.М., Плотников В.В., Соколов В.И. Формирование нанокластеров кремния в структуре кремний/диоксид кремния // Изв. вузов. Приборостроение. – 2006. – Т. 48. – № 3. – С. 62–67.

4. Medvid Аrthur, Dmitruk Igor, Onufrijevs Pavels, Pundyk Iryna. Properties of Nanostructure Formed on SiO2/Si Interface by Laser Radiation // Solid State Phenomena. – 2007. – V. 131–133. – P. 559–562.

5. Medvid А., Onufrijevs P., Kropman D., Mellikov E., Mukepavela F., Bakradze F. Low-K factor of SiO2 layer on Si irradiated by YAG:Nd laser // Journal of Non-Crystalline Solids. – 2007. – V. 353. – № 5–7. – P. 703–707.

6. Bai G.F., Wang Y.Q., Ma Z.C., Zong W.H. and Qin G.G. Electroluminescence from Au/native silicon oxide layer/pC-Si and Au/native silicon oxide layer/nC-Si structures under reverse biases. // J. Phys.: Condens. Matter. 1998. V. 10. Р. 717–721.

7. Lin C.-F., Liu C.W., Chen M.-J., Lee M.H. and Lin I.C. Infrared electroluminescence from metal-oxide-semiconductor structures on silicon. // J. Phys.: Condens. Matter. 2000. V. 12. Р. 205–210.

8. Kim K., Suh M.S., Kim T.S., Youn C.J., Suh E.K., Shin Y.J., Lee K.B. and Lee H.J. Room-temperature visible photoluminescence from silicon-rich oxide layers deposited by an electron cyclotron resonance plasma source. // Appl. Phys. Lett. 1996. V. 69. Р. 3908– 3910.

9. Torchinska T., Aguilar-Hernandez J., Morales-Rodriguez M., Mejia-Garcia C., ContrerasPuente G., Becerril Espinosa F.G., Bulakh B.M., Schverbina L.V., Goldstein Y., Many A. and Jedrzejewski J. Comparative investigation of photiluminiscence of silicon wire structures and silicon oxide films. // Journal of Physics and Chemistry of Solids. 2002. V. 63. Р. 561–568.

10. Torchynska T.V., Bulakh B.M., Polupan G.P., Palacios Gomez J., Flores Gonzalez H.A., Bacarril Espinoza F.G., Ita Torre A. and Scherbina L.V. Comparative investigation of surface structure, photoluminescence and its excitation in silicon wires. // Journal of Electron Spectroscopy and Related Phenomena. 2001. V. 114–116. Р. 235–241.

public

SLIB.uz — O'zbekiston ilmiy jurnallari va maqolalar yagona tizimda ilmiy nashirlarni bir joyda ko'rish, izlash va ulardan foydalanish imkonini beruvchi zamonaviy platforma.

Ijtimoiy tarmoqlarda
instagramtelegramyoutubefacebook

Bog'lanish uchun

Manzil:Chilonzor tumani Qatortol ko'chasi 60B

Tel:+998(55)511-44-00

Savol-javob va takliflar uchun

© 2026 Barcha huquqlar himoyalangan.