STUDYING EFFECT OF TEMPERATURE ON PHOTOVOLTAIC CHARACTERISTICS OF PHOTOVOLTAIC MODULES BASED ON CIGS SOLAR CELLS

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STUDYING EFFECT OF TEMPERATURE ON PHOTOVOLTAIC CHARACTERISTICS OF PHOTOVOLTAIC MODULES BASED ON CIGS SOLAR CELLS

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The article presents the experimental results of the temperature dependence of the load current-voltage characteristics of a solar photovoltaic (PV) module based on a polycrystalline semiconductor binary compound Cu(In,Ga)Se2 under normal sunlight Prad=800±5 W/m2, in a temperature range of (32÷60) оС. It was found that the temperature dependence of the photocurrent has two slopes, which is explained by a change in the generation-recombination mechanism. An increase in the short-circuit current with an increase in the temperature of the photovoltaic module is explained by an increase in the drift length of minority charge carriers, due to an increase in the lifetime of minority carriers. A decrease in the open-circuit voltage with an increase in temperature is explained by an exponential increase in the reverse saturation current and a decrease in the width of the band gap of the semiconductor. The PV module efficiency decreases linearly with increasing temperature, from 12.5% to 11.45%, and a linear dependence with two slopes is observed. The CIGS PV module, in the temperature range of 300 – 310 оК, had a temperature coefficient of efficiency KEff1≈-0.0342 % / оК, and in the range of 310 - 320 оК had a temperature coefficient of efficiency KEff2≈-0.0917 % /оК. It was found that with increasing temperature, the values of the shunt and series resistance decrease. A large loss of generated power is observed on the shunt resistance of the solar photovoltaic module.

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# efficiency# Cu(In# Ga)Se2# polycrystalline semiconductor# short-circuit current# open circuit voltage# solar radiation# solar photovoltaic module# series resistance

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https://eroi.uz/11.0008/A0925-0008

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