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SURFACE PHOTOCONDUCTIVITY IN A MULTIVALLEY SEMICONDUCTOR

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MAQOLA ANNOTATSIYASI

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Кўп воҳали яримчексиз яримўтказгичнинг сирт фотоўтказувчанлиги ҳисобланган. Бунда ток ташувчиларнинг сиртдан кўзгули сочилиши эътиборга олинган бўлиб, Больцманнинг кинетик тенгламасига кўра ҳисобланган.

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# электрон# сирт фотоўтказувчанлиги# кўп воҳали яримўтказгич# сиртда сочилиш# сирт# Больцманнинг кинетик тенгламаси# поверхностная фотопроводимость# многодолинный полупроводник# зеркальное отражение# поверхность# кинетическое уравнение Больцмана# the surface photoconductivity# multivalley semiconductor# mirror reflection# electron# the surface# the Boltzmann kinetic equation

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Foydalanilgan adabiyotlar

1. Green R.F. Transfer and scattering at the crystal surface. In the book: New in the study of a surface solid body. - M .: Mir. -1977. -Р. 104 - 154. 2. Normantas E., Picus G.E. Surface photovoltaic effects in multivalley semiconductors// Phys. Sol. Stat. -1986. -№ 6. -Р. 1665 – 1679. 3. Ivchenko E.L., Pikus G.E. Superlattices and other Heterosructures. Symmetry and optical Phenomena// Springer Verlag. 1sted. -1995, 2nded. -1997. 4. Uchibori Yuki, Chuman Hiroki, Hayashi Hiromitsu. Piezoelectric photothermal and surface photo-voltage studies of carrier recombination mechanism at interface of Si p_-n junction//Jap. J. Appl. Phys. -2008. -No: 7. –P.13267-13271. 5. Shinji Tokudomi, Junpei Azuma, Kazutoshi Takahashi, and Masao Kamada. Ultrafast Time Dependence of Surface Photo-Voltage Effect on p-Type GaAs(100) Surface //J. Phys. Soc. Jap. -2008. -No: 1. P.1678-1684. 6. Kavaliauskas J., Krivait G., echavi ius B., Valu is G., Seliuta D., Sherliker B., Halsall M., Harrison P., Linfield E., Stee M. Differential surface photovoltage spectroscopy of -doped GaAs/AlAs multiple quantum wells below and close to Mott transition// Phys. Stat. Sol.B. -2008. -No: 1. P.13654-13659.

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