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ТОР ЗОНАЛИ ЯРИМЎТКАЗГИЧЛАРДА ТАҚИҚЛАНГАНЗОНА КЕНГЛИГИНИ ЎЗГАРИШИ

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Scientific Bulletin of Namangan State University

Scientific Bulletin of Namangan State University

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ARTICLE ANNOTATION

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Many experiments have shown that, with increasing temperature, the forbidden zone of the semiconductor decreases but there are some accelerated semiconductors (PbTe, PbS, PbSe) where, with increasing temperature, the forbidden zone of the semiconductor increases. In the work, this anomaly is explained by the model of the temperature dependence of the energy states.

AUTHORS

N.Sharibaev

J.Mirzaev

Tags

# impurity# doping# ҳолатлар зичлиги# энергетик тирқишлар# яримўтказгичларда тақиқланган з# плотность состояний# энергетические щели# запрещенная зона полупроводник# управления энергетическими зонам# density of states# energy gaps# the forbidden zone of a sem# control of energy zones

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Article Identifiers

ROI:

https://eroi.uz/11.0031/A1120-0004

DOI:

Not Available

References

B.Ridli. Kvantovie protsessi v poluprovodnikax. (M..Mir, 1986, 304 b.)

G.Gulyamov, N.Yu.Sharibaev. FTP – Sankt Peterburg, T.45. №2. – S.178-182. (2011)

G.Gulyamov, N.Yu.Sharibaev. Poverxnost. Rentgenovskie, sinxrotronnie I neytronnie issledovaniya. №9 b. 13-17. (2012)

G.Gulyamov, N.Yu.Sharibaev. Fizicheskaya Injeneriya Poverxnosti Ukraina, g.Xarkov. T.10, №2 – b.4-8 (2012).