АМОРФ ГИДРОГЕНИЗАЦИЯЛАНГАН КРЕМНИЙ ПАРДАЛАРИНИ  ФОТОЭЛЕКТРИК ЎТКАЗУВЧАНЛИГИ

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25 Noyabr 2020

Main language:Uzbek

АМОРФ ГИДРОГЕНИЗАЦИЯЛАНГАН КРЕМНИЙ ПАРДАЛАРИНИ ФОТОЭЛЕКТРИК ЎТКАЗУВЧАНЛИГИ

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Scientific Bulletin of Namangan State University

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ARTICLE ANNOTATION

In this manuscript,it was investigated that the mechanism of recombinational processes in the film of a-Si: H in terms of the dependence of Stationary photoconductivity on temperature(The method of the dependence of Steady-State Photoconductivity on temperature). It was explained that rebombination processes is differently related to D-centers by division temperature into two intervals for the strongly absorbed a -Si:H is evident from the graph of σ ~ σ0(1/T)

AUTHORS

A.Nabiyev

S.Zaynobidinov

U.Babakhodzhayev

N.Muydinov

Tags

# фотопроводимость# скорость генерации# щель подвижности# Аморф гидридланган кремний# генерация тезлиги# фотоэлектр ўтказувчанлик# хусусий ўтказувчанлик# рекомбинация марказлари# Аморфной гидрогенизированный кре# :Amorphous Hydrogenated Silico# peed of generation# photoelectric conductivity# private conductivity# centers of recombination# crack of mobility. :Amorphous H

Article Identifiers

ROI:

https://eroi.uz/11.0031/A1120-0005

DOI:

Not Available

References

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