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РЕЛАКСАЦИОННАЯ ЗАВИСИМОСТЬ ЕМКОСТИ ТРЕХСЛОЙНОЙ СТРУКТУРЫ В ПРОЦЕССЕ ФОРМИРОВАНИЯ ЗАРЯДА ИНВЕРСИОННОГО СЛОЯ.

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Scientific Bulletin of Namangan State University

Scientific Bulletin of Namangan State University

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ARTICLE ANNOTATION

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The effect of ultrasonic action on the density of electronic states localized at the Si-glass interface is studied. A method is proposed for determining the surface and volume generation rates of charge carriers using the calculated time dependence of the space charge region width (SCR) when comparing it with the experimental dependence. Ultrasonic treatment of Al-n-Si - glass - Al structures with a frequency of 2.5 MHz and a power of 0.5 W for 40 minutes leads to a decrease in the rate of charge formation of the inversion layer. This is due to a decrease in the integral density of electronic states localized at the semiconductor-glass interface and does not affect the energy spectrum of bulk electronic states in a semiconductor.

AUTHORS

B.Kuchkarov

O.Mamatkarimov

A.Abdulkhayev

Tags

# релаксация# relaxation# генерация# Ультразвуковое облучение# С-V характеристики# локализованные состояния# генерация носителей# диэлектрические потери# межфазные границы# Ultrasonic irradiation# C-V characteristics# localized states# carrier generation# dielectric loss# interfaces# Ултратовуш нурланиш# С-V характеристикаси# махалилаштирилган холатлар# яшаш вакти# диэлектрик исроф# инверсиялар қатлами

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Article Identifiers

ROI:

https://eroi.uz/11.0031/A1220-0157

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Not Available

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