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ПЕРЕНОС ДЫРОК В ФОТОЭЛЕМЕНТАХ НА ОСНОВЕ АМОРФНОГО ГИДРИРОВАННОГО КРЕМНИЯ

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Scientific Bulletin of Namangan State University

Scientific Bulletin of Namangan State University

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ARTICLE ANNOTATION

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In this manuscript, films of amorphous hydrogenated silicon were studied by using the photo-VACH characteristics of the vidicon target. In the photo-VACH characteristic, a region is observed that obeys the quadratic law. It is explained that the contribution of changes in the dielectric constant of a-Si:H and the hole lifetime depending on the applied voltage for obtaining information from this section about the hole transportation mechanism is too significant.

AUTHORS

A.Nabiyev

Tags

# мишен видикона# щель подвижности# mobility gap# Аморфный полупроводник# гидрированный кремний# дырочные ловушки# энергетика ловушек# amorphous semiconductor# hydrogenated silicon# target of vidicon# hole traps# traps energy# amorf yarimo'tkazgich# gidrogenlangan kremniy# vidikon nishoni# kovak tuzoqlari# tuzoqlarning energiyasi# harakatchanlik bo'shlig'i

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Article Identifiers

ROI:

https://eroi.uz/11.0031/A0121-0243

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Not Available

References

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