1 Noyabr 2019
32Main language:English
SIMULATION OF PARAMETERS OF nGe- pSi1-XGeX DIODE STRUCTURES ON TCAD SENTAURUS
Field of Science:
5dbc2e351fd22.pdf
ARTICLE ANNOTATION
. In this article the parameters of pSi1-xGex solid solution was simulated by using TCAD Sentaurus program. The gap dependence on composition of solid solution was carried out. A current-voltage characteristics of the structure was simulated at different composition as well as at different carrier concentration in the film
AUTHORS
S.Saidov
UrDU
U.Asatova
UrDU
SH.Ismailov
UrDU
SH.Usmonov
UrDU
Tags
# solid solution# band gap energy# твердый раствор# heterogeneous junction# molar composition# impurity# : твердый раствор# гетеропереход# ширина запрещенной зоны# мольный состав# легирующая примесь
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