INFLUENCE OF NON-UNIFORM LATERAL INTERFACE DEFECTS DISTRIBUTION TO THE CURRENT-VOLTAGE CHARACTERISTIC OF MOSFET

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1 Noyabr 2019

Main language:Uzbek

INFLUENCE OF NON-UNIFORM LATERAL INTERFACE DEFECTS DISTRIBUTION TO THE CURRENT-VOLTAGE CHARACTERISTIC OF MOSFET

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Zamonaviy fan taʼlim va tarbiyaning dolzarb muammolari ilmiy elektron jurnali

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In the paper the influence of the defect lateral distribution on drain current in nanometer MOSFET is considered.The simulation results show the drain current depends on lateral as well as longitudinal distribution of interface defects. Maximal change of the drain current is seen at localisation of defects at the center of interface.

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https://eroi.uz/11.0021/A1119-0017

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References

1. TermanL.M. //Sol. St. Electron. 1962. N5. P.285

2. WinokurP.S., SchwankJ.R., McwhorterP.J. et.al.//IEEETrans on Nucl.Sci.1984. VolNS-31. N6, P.1453-1460

3. SchwankJ.R., WinokurP.S., McwhorterP.J. et.al.//IEEETrans. On Nucl.Sci.1984. Vol NS-31. N6, P.1434-1438

4. Barret R.C. and Quate C.F. J. Appl. Phys. 1991, 70, pp. 2725-2733

5. АтамуратовА.Э., МатрасуловД.У., XабибуллаевП.К. // ДАН. 2007. Т. 414. № 6. С. 761–764

INFLUENCE OF NON-UNIFORM LATERAL INTERFACE DEFECTS DISTRIBUTION TO THE CURRENT-VOLTAGE CHARACTERISTIC OF MOSFET

Zamonaviy fan taʼlim va tarbiyaning dolzarb muammolari ilmiy elektron jurnali

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