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INVESTIGATION OF POLYCRYSTALLINE SILICON AND CADMIUM TELLURIDE BASED STRUCTURES PROPERTIES

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In this paper the photoelectric properties of heterostructures based on CdTe - SiO2 – Si are studied. The possibility to control of spectrum of short-circuit current and photos - EMF using built-in charge in the dielectric (SiO2) is demonstrated for the first time. It has been found that with the increase in capacity of the corona discharge in the shortwave spectrum of the shifted region of the spectrum from 0.93 to 1.5eV, and the activation energy of deep level of 0.73eV varies considerably, and this change is due to the Poole – Frenkel effect. It has been found, the electric field in the vicinity of the defect ε=105 V/cm.

AUTHORS

Y.Vaytkus

Vilnius State University

S.Otajonov

Vilnius State University

N.Alimov

Vilnius State University

Tags

# фотопроводимость# photoconductivity# deep levels# фотоўтказувчанлик# фотоэлектр ҳаракатлантирувчи куч# фотосезувчанликнинг тарқалиш спе# токнинг қисқа туташув асимметрия# юзаки фото efm# паст даражалар# фотоэлектрическая движущая сила# спектр распределения фоточувстви# нарушение асимметрии короткого з# поверхностное фото efm# низкие уровни# photo-electromotive force# spectrum distribution of photose# short circuit current barrier as# surface photo efm

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References

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