9 Avgust 2022
59Main language:Uzbek
ЭЛЕМЕНТЫ ПАМЯТИ НА ОСНОВЕ ТОНКОПЛЕНОЧНОЙ ГЕТЕРОСТРУКТУРЫ P-CDTE-SIO 2 -SI-AL.
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ARTICLE ANNOTATION
In heterestructure, Р-CdTe-SiO 2- Si-Al it is easily realized necessary conduction for existence of optical spectral memory presence asymmetric micro potential barriers and deep equations. Time of a relaxation, which happens about 25 days. It is possible to use heterestructure as opto - electronic memory capable not only to remember signals, but also to summarize them.
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# электропроводность# глубокий уровень# ток короткого замыкания# электрўтказувчанлик# фотосезгирлик# фоточувствительность# photosensitivity# deep level# фото-ЭДС# коронный разряд# short circuit current# қисқа туташув токи# потенциал тўсиқ# фото-ЭЮК# тож
разряди# чуқур сатҳ# потенциальный
барьер# potential barrier# the photo-emf# corona
discharge# electric conductivity
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References
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