CHANGES IN FERMI QUASI LEVELS IN SILICON P-N TRANSITIONS UNDER EXPOSURE TO LIGHT AND DEFORMATION AND THEIR INFLUENCE ON VOLT-AMPERE CHARACTERISTICS OF DIODES.

Investigated the changes in the quasi-Fermi levels of electrons and holes under illumination of light and deformation. The relationship between the current-voltage characteristic of the pn junction and the changes in the quasi-Fermi levels of electrons and nuclei is considered. It is shown that a change in the Fermi quasilevels by illumination leads to a strong displacement of the current – voltage characteristic of the p – n junction along the j – V plane .