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MODELING OF SHUBNIKOV-DE HAAZ OSCILLATIONS IN NARROW BAND GAP SEMICONDUCTORS UNDER THE EFFECT OF TEMPERATURE AND MICROWAVE FIELD

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ARTICLE ANNOTATION

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For the first time, a mathematical model has been developed to determine the effect of absorption of microwave radiation on the temperature dependence of the Shubnikov-de Haas oscillations in semiconductors. Based on the proposed mathematical model, the absorption of microwave radiation in semiconductor structures at high temperatures was derived using the experimental oscillation results.

AUTHORS

U.Erkabayev

Namangan muhandislik – texnologiya instituti

R.Raximov

Namangan muhandislik texnologiyasi instituti

Tags

# полупроводник# semiconductor# Landau levels# запрещенная зона# band gap# уровней Ландау# квантующем магнитном поле# yarimo’tkazgich# Landau sathlari# kvantlovchi magnit maydoni# ta’qiqlangan zona# quantum magnetic

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References

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