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RESEARCH OF PROCESSES OF IMPLANTATION OF IONS IN MONOCRYSTAL GaAs (001) ON PURPOSE INCREASE IN EFFICIENCY OF SOLAR ELEMENTS

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Zamonaviy fan taʼlim va tarbiyaning dolzarb muammolari ilmiy elektron jurnali

Zamonaviy fan taʼlim va tarbiyaning dolzarb muammolari ilmiy elektron jurnali

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ARTICLE ANNOTATION

quote
On purpose increase efficiency of solar elements it has been investigated process of ionic implantation influencing the big number of the interconnected coefficients, most important of which is target orientation, a grade, initial energy and a corner of falling of primary particles.

AUTHORS

I.Khafizov

BuxMTI

K.Gafforov

BuxMTI

K.Hafizov

BuxMTI

Tags

# полуканал# p-n  ўтиш# ѐруғлик  исрофлари# қайтиш  коэффициенти# электрон-ковак# диффузия узунлиги# ионли имплантация# нишон йўналиши# киритиш коэффициенти# нимканал# фокусировка# p-n  переход# световые  потери# коэффициент  отражения# электрон-дырка# диффузионная  длина# ионная  имплантация# ориентация мишени# коэффициент внедрения# p-n  transition# light  losses# reflex  ion  coefficient# an  electron-  hole# diffusions  length# ionic  implantation# target  orientation# introduction  coefficient# the semi channel# focusing

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Article Identifiers

ROI:

https://eroi.uz/11.0021/A1019-0021

DOI:

Not Available

References

Chopra K. Thin-film solar elements / К. Chopra,; Moskva, 1986.

Resources and efficiency of use of renewed energy sources / P.P. Bezrukix. – Sankt-Peterburg: Nauka, 2002.

Physics of a firm body: the Manual / I.K. Vereofgin. / Moskva, 2001.

Bahadyrhanov M. S, Marovtsev A.S., Tachilins S.A., Research methods of solar elements, Toshkent, 2009.