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ANGULAR AND ENERGY DISTRIBUTIONS OF LOW-ENERGY ARGON IONS AT THE SCATTERING FROM AIIIB V SEMICONDUCTOR SURFACE

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The Ar+ ions scattering from the InP(001), surfaces at the grazing incidence have been simulated by the computer simulation method. The trajectory, energy and angular distributions of scattered argon ions on above mentioned surface semichannels have been calculated.

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# semichannels# Компьютерное моделирование# ионное рассеяния# полуканал# kоmpyutеrda mоdеllashtirish# iоn sоchilish# yarim kanal# Computer simulation# ion scattering

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