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INTERCAPACITANCE BETWEEN TWO CHARGES LOCATED IN THE DIFFERENT ENVIRONMENTS

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ARTICLE ANNOTATION

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It is investigated the dependence of intercapacitance between two point charges located in different environments on the relative position of border. The image method is used. It is considered two cases: the charges is located at line which is perpendicular to the border and the charges is located at line which is not perpendicular to the border. The result show that in both cases the capacitance is increased with displacement the border

AUTHORS

A.Abdikarimov

Urgench State University

A.Yusupov

Tashkent University of Information Technologies named after Muhhamad al-Khorazmi

A.Atamuratov

Urgench State University

Tags

# ѐмкость# vertikal MOY transistor# MOY transistor# sig`im# zatvor# potencial.# Вертикаль МОПТ# МОПТ# затвор# FinFET# MOSFET# capacitance# gate# potential

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References

Azzedin Es-Shakhi, Masud Chowdhury. Analysis of device capacitance and subthreshold behavior of Tri-gate SOI FinFET. Microelectronics Journal, 62, (2017), 30-37

Hildenburg V.B., Miller M.A., Collection of problems in electrodynamics. A manual for university students enrolled in physical areas and specialties.- M. Fizmatgiz, 2001, 168 p.

Batygin V.V., Toptygin I.N., Collection of problems in electrodynamics. M: Science, 1970.