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RESEARCH OF PROCESSES OF IMPLANTATION OF IONS IN MONOCRYSTAL GaAs (001) ON PURPOSE INCREASE IN EFFICIENCY OF SOLAR ELEMENTS

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Zamonaviy fan taʼlim va tarbiyaning dolzarb muammolari ilmiy elektron jurnali

Zamonaviy fan taʼlim va tarbiyaning dolzarb muammolari ilmiy elektron jurnali

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ARTICLE ANNOTATION

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On purpose increase efficiency of solar elements it has been investigated process of ionic implantation influencing the big number of the interconnected coefficients, most important of which is target orientation, a grade, initial energy and a corner of falling of primary particles.

AUTHORS

I.Khafizov

Bukhara Engineering and Technological Institute

K.Gafforov

Bukhara Engineering and Technological Institute

K.Hafizov

Bukhara Engineering and Technological InstituteBukhara Engineering and Technological Institute

Tags

# полуканал# электрон-ковак# диффузия узунлиги# ионли имплантация# нишон йўналиши# киритиш коэффициенти# нимканал# электрон-дырка# ориентация мишени# коэффициент внедрения# the semi channel# p-n ўтиш# ѐруғлик исрофлари# қайтиш коэффициенти# p-n переход# световые потери# коэффициент отражения# диффузионная длина# ионная имплантация# p-n transition# light losses# reflex ion coefficient# an electronhole# diffusions length# ionic implantation# target orientation# introduction coefficient

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Article Identifiers

ROI:

https://eroi.uz/11.0021/A1019-0157

DOI:

Not Available

References

[1]. Chopra K. Thin-film solar elements / К. Chopra,; Moskva, 1986.

[2]. Resources and efficiency of use of renewed energy sources / P.P. Bezrukix. – Sankt-Peterburg: Nauka, 2002.

[3]. Physics of a firm body: the Manual / I.K. Vereofgin. / Moskva, 2001

[4]. Bahadyrhanov M. S, Marovtsev A.S., Tachilins S.A., Research methods of solar elements, Toshkent, 2009.