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INFLUENCE OF HIGH RADIATION DOSES ON THE BEHAVIOR OF TRANSITION ELEMENT IMPURITIES IN SILICON
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INFLUENCE OF HIGH RADIATION DOSES ON THE BEHAVIOR OF TRANSITION ELEMENT IMPURITIES IN SILICON
134
Name of journal
Физика полупроводников и микроэлектроника
Number of edition
2020, том 2, выпуск 4
View count
134
Web Address
https://uzjournals.edu.uz/semiconductors/vol2/iss4/13/
DOI
Date of creation in the UzSCI system
28-03-2022
Read count
0
Date of publication
25-08-2020
Main Language
Ingliz
Pages
55-58
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№
Author name
position
Name of organisation
1
Utamuradova S.B.
Director
Semiconductor Physics and Microelectronics Research Institute
№
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