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Publisher info
Name:OʻzMU huzuridagi Yarimoʻtkazgichlar fizikasi va mikroelektronika ITI
Address:100057, Toshkent sh., Olmazor tum., Yangi Olmazor koʻchasi, 20 uy.
Phone: +998 71 248 79 94
Email: ispm_uz@mail.ru
| Name | 2020, том 2, выпуск 4 | ||
| Journal | Физика полупроводников и микроэлектроника | ||
| Volume Number | 2 | ||
| Published At | 25/08/2020 | ||
| Pages | 69 | ||
| Issue Number | 4 | ||
| Total number | 6 | ||
| File | |||
| The full name of the article | Language | Pages | View count | Read count |
|---|---|---|---|---|
|
Физика полупроводников и микроэлектроника |
Ingliz | 29-32 | 191 | 0 |
|
THE INFLUENCE OF THE MICROWAVE FIELD ON THE CHARACTERISTICS OF THE p-n JUNCTION Физика полупроводников и микроэлектроника |
Ingliz | 33-36 | 186 | 0 |
|
COMPACT SPECKLE INTERFEROMETER FOR DIGITAL SHEAROGRAPHY Физика полупроводников и микроэлектроника |
Ingliz | 37-40 | 252 | 0 |
|
NEW ENERGY AND RESOURCE SAVING TECHNOLOGIES FOR PRODUCING SILICON AND ITS ALLOYS Физика полупроводников и микроэлектроника |
Ingliz | 41-44 | 197 | 0 |
|
CRITERIA FOR OBTAINING COMPENSATED NICKEL SILICON Физика полупроводников и микроэлектроника |
Ingliz | 45-47 | 257 | 0 |