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This paper discusses methods for the synthesis of zinc oxide, which is an important model material for fundamental research in the field of solid state physics. The surface of zinc oxide can dramatically affect the volumetric properties of the material, which is used to make a wide variety of sensors. Heterostructures and p–n heterojunctions based on ZnO, which are obtained by epitaxial growth of ZnO n-type conductivity on other p-type semiconductors with similar crystal lattice parameters, also have broad prospects for practical application

  • Количество прочтений 46
  • Дата публикации 19-09-2024
  • Язык статьиIngliz
  • Страницы 160-168
English

This paper discusses methods for the synthesis of zinc oxide, which is an important model material for fundamental research in the field of solid state physics. The surface of zinc oxide can dramatically affect the volumetric properties of the material, which is used to make a wide variety of sensors. Heterostructures and p–n heterojunctions based on ZnO, which are obtained by epitaxial growth of ZnO n-type conductivity on other p-type semiconductors with similar crystal lattice parameters, also have broad prospects for practical application

№ Название ссылки
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