28 Mart 2022
29Main language:English
STRUCTURAL FEATURES OF THE THIN-FILM N-ZnO/P-Si HETEROJUNCTION
Field of Science:
file.pdf
ARTICLE ANNOTATION
No annotation available
AUTHORS
S.Rembeza
Voronezh State Technical University
OTHER ARTICLES IN THIS JOURNAL
- DETERMINING THE LIFETIME OF MINORITY CHARGE CARRIERS AND IRON IMPURITY CONCENTRATION IN SEMICONDUCTOR STRUCTURES WITH SUBMICRON LAYERS
Semiconductor Physics and Microelectronics · 28 Mart 2022
- THE POSITIVE FEEDBACK AMPLIFICATION MECHANISM OF THE INJECTION PHOTODIODE BASED ON LARGE-BLOCK CdTe FILMS
Semiconductor Physics and Microelectronics · 28 Mart 2022
- INVESTIGATION OF RECOMBINATIONAL PROCESSES THROUGH PHOTOELECTRIC CONDUCTIVITY OF THE FILM OF HYDROGENATED AMORPHOUS SILICON AND ITS MODIFICATION
Semiconductor Physics and Microelectronics · 28 Mart 2022
- INVESTIGATION OF DEFECT FORMATION PROCESSES IN SILICON WITH IRON IMPURITY
Semiconductor Physics and Microelectronics · 28 Mart 2022
- PHOTOELECTRIC MEASUREMENTS OF SELENIUM DOPED SILICON
Semiconductor Physics and Microelectronics · 28 Mart 2022
- THE INFLUENCE OF THE MICROWAVE FIELD ON THE CHARACTERISTICS OF THE p-n JUNCTION
Semiconductor Physics and Microelectronics · 28 Mart 2022
Rate Article
0
5
4
3
2
1
Article Identifiers
DOI:
Not Available