296

Negative differential resistance (NDR) switching was observed in ZnMgO crystalline thin films grown on the p-type Si with a thin native SiO2 oxide layer by ultrasonic spray pyrolysis (USP). The NDR switching was observed during the RESET cycle. This effect is explained by the resonant tunneling of electrons through the Ag nanoclusters in SiO2 layer after rupture of conductive silver filaments

  • Name of journal
  • Number of edition
  • View count 296
  • Web Address
  • DOI
  • Date of creation in the UzSCI system 05-10-2020
  • Read count 188
  • Date of publication
  • Main LanguageIngliz
  • Pages315-318
English

Negative differential resistance (NDR) switching was observed in ZnMgO crystalline thin films grown on the p-type Si with a thin native SiO2 oxide layer by ultrasonic spray pyrolysis (USP). The NDR switching was observed during the RESET cycle. This effect is explained by the resonant tunneling of electrons through the Ag nanoclusters in SiO2 layer after rupture of conductive silver filaments

№ Author name position Name of organisation
1 Abdullaev S..
2 Sharipova R..
3 Yuldashev S.U.
№ Name of reference
1 Yang Y., Qi J., Guo W., Qin Z., Zhang Y., Appl. Phys. Lett. Lett. 2010, 96, 093107.
2 Zhu B., Zheng K., Wu X., Ang L. K., Scientific Reports, 2017, 7, 43664.
3 Simanjuntak F.M., Panda D., Wei K., Tseng T., Nanoscale Res. Lett. 2016, 11, 368
4 Kadhim M. S., Yang F., Sun B., Wang Y., Guo T., Jia Y., Yuan L., Yu Y., Zhao Y., Appl. Phys. Lett. 2018, 113, 053502
5 Filatov D. O., Lapshina M.A., Antonov D. A. , Gorshkov O. N., V Zenkevich A. V., Lebedinskii Yu. Yu., Journal of Physics: Conference Series, 2010, 245,012018
Waiting