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DEFECT FORMATION DURING LOW-TEMPERATURE ANNEALING OF SILICON DOPED WITH ION IMPURITIES
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DEFECT FORMATION DURING LOW-TEMPERATURE ANNEALING OF SILICON DOPED WITH ION IMPURITIES
249
Name of journal
Физика полупроводников и микроэлектроника
Number of edition
2020, том 2, выпуск 3
View count
249
Web Address
https://uzjournals.edu.uz/semiconductors/vol2/iss3/2/
DOI
Date of creation in the UzSCI system
27-03-2022
Read count
0
Date of publication
25-06-2020
Main Language
Ingliz
Pages
13-16
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№
Author name
position
Name of organisation
1
Utamuradova S.B.
Директор
НИИ физики полупроводников и микроэлектроники при НУУЗ
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