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Publisher info
Name:OʻzMU huzuridagi Yarimoʻtkazgichlar fizikasi va mikroelektronika ITI
Address:100057, Toshkent sh., Olmazor tum., Yangi Olmazor koʻchasi, 20 uy.
Phone: +998 71 248 79 94
Email: ispm_uz@mail.ru
| Name | 2020, том 2, выпуск 3 | ||
| Journal | Физика полупроводников и микроэлектроника | ||
| Volume Number | 2 | ||
| Published At | 25/06/2020 | ||
| Pages | 70 | ||
| Issue Number | 3 | ||
| Total number | 6 | ||
| File | |||
| The full name of the article | Language | Pages | View count | Read count |
|---|---|---|---|---|
|
DIFFUSION OF CLUSTERS OF IMPURITY NICKEL ATOMS IN A SILICON LATTIC Физика полупроводников и микроэлектроника |
Ingliz | 9-12 | 160 | 0 |
|
DEFECT FORMATION DURING LOW-TEMPERATURE ANNEALING OF SILICON DOPED WITH ION IMPURITIES Физика полупроводников и микроэлектроника |
Ingliz | 13-16 | 182 | 0 |
|
Физика полупроводников и микроэлектроника |
Ingliz | 17-19 | 139 | 0 |
|
FERMI THEORY ON DIMENSION EFFECTS IN MULTIPLE EXCITON GENERATION Физика полупроводников и микроэлектроника |
Ingliz | 20-22 | 156 | 0 |
|
FEATURES OF SILICON p-n STRUCTURES WITH A LARGE SENSITIVE SURFACE AND A VOLUME CHARGE AREA Физика полупроводников и микроэлектроника |
Ingliz | 23-26 | 190 | 0 |