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FEATURES OF SILICON p-n STRUCTURES WITH A LARGE SENSITIVE SURFACE AND A VOLUME CHARGE AREA
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FEATURES OF SILICON p-n STRUCTURES WITH A LARGE SENSITIVE SURFACE AND A VOLUME CHARGE AREA
186
Name of journal
Физика полупроводников и микроэлектроника
Number of edition
2020, том 2, выпуск 3
View count
186
Web Address
https://uzjournals.edu.uz/semiconductors/vol2/iss3/5/
DOI
Date of creation in the UzSCI system
27-03-2022
Read count
0
Date of publication
25-06-2020
Main Language
Ingliz
Pages
23-26
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№
Author name
position
Name of organisation
1
Muminov R.A.
scienstist
Physical-Technical Institute SPA “Physics-Sun” of ASUz
№
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