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STUDY OF STRUCTURAL DISORDERING OF SILICON IONIC IMPLANTED WITH MANGANESE BY THE METHOD OF COMBINATION LIGHT SCATTERING (RS).
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STUDY OF STRUCTURAL DISORDERING OF SILICON IONIC IMPLANTED WITH MANGANESE BY THE METHOD OF COMBINATION LIGHT SCATTERING (RS).
206
Name of journal
Физика полупроводников и микроэлектроника
Number of edition
2020, том 2, выпуск 3
View count
206
Web Address
https://uzjournals.edu.uz/semiconductors/vol2/iss3/13/
DOI
Date of creation in the UzSCI system
27-03-2022
Read count
0
Date of publication
25-06-2020
Main Language
Ingliz
Pages
56-59
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№
Author name
position
Name of organisation
1
Arzikulov E..
scienstist
Samarkand State University
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