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Study the residual effects after all-round hydrostatic pressure (AHP) of the original
and doped with nickel and gadolinium silicon samples, and study the effect of all-round
hydrostatic compression on the relaxation characteristics of metal-semiconductor structures
fabricated based on crystalline silicon with different resistivity. It has been shown that in n-Si with
AHP up to 40 kbar will not change the peaks of oxygen and carbon
absorption, while in n-Si<Ni> at P≥30 kbar, the oxygen and carbon absorption peaks gradually
decrease and completely disappear at pressure of P=55 kbar; in n-Si<Gd>, the absorption spectra
turned out to be more resistant to external pressure.
In the range from 12 kbar to 38 kbar, n-Si<Ni> sample under the influence of pressure had
nonmonotonic change in resistivity, with the formation of a maximum at P ≥ 35 kbar, which is
associated with impurity precipitates by two acceptor levels (Ev+0.2 eV and Ec–0.4 eV). The
experimentally observed non-monotonicity in the dependences ρ=f (P) is consequence of two
counter processes. Mechanical stresses that stimulate the gettering of thermal defects from the
bulk of the semiconductor or impurities localized in the metal-semiconductor transition layer and
interacting with surface states can be responsible for changing the properties of the interface
under pressure.
 

  • Web Address
  • DOI
  • Date of creation in the UzSCI system 20-04-2023
  • Read count 172
  • Date of publication 20-04-2023
  • Main LanguageIngliz
  • Pages5-13
English

Study the residual effects after all-round hydrostatic pressure (AHP) of the original
and doped with nickel and gadolinium silicon samples, and study the effect of all-round
hydrostatic compression on the relaxation characteristics of metal-semiconductor structures
fabricated based on crystalline silicon with different resistivity. It has been shown that in n-Si with
AHP up to 40 kbar will not change the peaks of oxygen and carbon
absorption, while in n-Si<Ni> at P≥30 kbar, the oxygen and carbon absorption peaks gradually
decrease and completely disappear at pressure of P=55 kbar; in n-Si<Gd>, the absorption spectra
turned out to be more resistant to external pressure.
In the range from 12 kbar to 38 kbar, n-Si<Ni> sample under the influence of pressure had
nonmonotonic change in resistivity, with the formation of a maximum at P ≥ 35 kbar, which is
associated with impurity precipitates by two acceptor levels (Ev+0.2 eV and Ec–0.4 eV). The
experimentally observed non-monotonicity in the dependences ρ=f (P) is consequence of two
counter processes. Mechanical stresses that stimulate the gettering of thermal defects from the
bulk of the semiconductor or impurities localized in the metal-semiconductor transition layer and
interacting with surface states can be responsible for changing the properties of the interface
under pressure.
 

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