Experimental results and computer simulation of multi-stage composite transistors are
presented. To study the volt - ampere characteristics of multistage composite transistors, a
dialogue computer simulation program, the Delphi programming environment, has been
developed. It is shown that the proposed multistage composite transistors can improve
manufacturability in its industrial production. It is shown that multistage homostructure
transistors according to the Darlington and Shiklai circuits operate stably at collector -emitter
voltages five times higher than in the case of individual transistors. The power dissipated on the
collector is 3 times higher than the rated value of the maximum permissible power of the
composite transistors. It is established that the efficiency of the method of stabilizing the emitter
current of a three-link homostructure transistor is 7 times higher in voltage and three orders of
magnitude higher in temperature compared to a conventional composite transistor. The
proposed homostructure transistors are designed to operate in terminal stages of power
amplifiers, radio transmitting devices, electronic equipment of industrial and automotive
electronics.
Maqolada ko‘p kaskadli tarkibiy tranzistorlarning eksperimental va kompyuterda
modellashtirish natijalari keltirilgan. Ko‘p kaskadli tarkibiy tranzistorlarning volt - amper
tavsiflarini tadqiq etish uchun, Delphi dasturlash muhitida muloqatli kompyuterda
modellashtirish dasturi ishlab chiqilgan. Taklif etilayotgan ko‘p kaskadli tarkibiy tranzistorlarni
sanoat ishlab chiqarish texnologiyasini oshiradi. Ko‘p kaskadli gomo tarkibiy Darlington va
Shiklai sxemalari asosidagi tranzistorlar, alohida olingan tranzistorlarga qaraganda, kollektoremitter kuchlanish qiymatlari bo‘yicha barqaror ishlashi besh marotabaga oshirilishi
keltirilgan. Tarkibiy tranzistorlarning pasport bo‘yicha talab etilgan quvvat qiymatlaridan, taklif
etilgan tranzistorlarning kollektordagi sarflanish quvvati 3 marotabaga oshadi. Oddiy
tranzistorlarga qaraganda uch zvenoli gomo tarkibiy tranzistorlarning emitter tokini
barqarorlash uslubining samaradorligi, kuchlanish bo‘yicha 7 martaga va temperaturasi
bo‘yicha 3 marotabaga yuqoridir. Taklif etilayotgan gomotarkibiy tranzistorlar quvvat
kuchaytirgichlarning chiqish kaskadlarida, radiouzatish qurilmalarida, sanoat va atomobil
elektronika qurilmalarida qo‘llash uchun mo‘ljallangan.
Experimental results and computer simulation of multi-stage composite transistors are
presented. To study the volt - ampere characteristics of multistage composite transistors, a
dialogue computer simulation program, the Delphi programming environment, has been
developed. It is shown that the proposed multistage composite transistors can improve
manufacturability in its industrial production. It is shown that multistage homostructure
transistors according to the Darlington and Shiklai circuits operate stably at collector -emitter
voltages five times higher than in the case of individual transistors. The power dissipated on the
collector is 3 times higher than the rated value of the maximum permissible power of the
composite transistors. It is established that the efficiency of the method of stabilizing the emitter
current of a three-link homostructure transistor is 7 times higher in voltage and three orders of
magnitude higher in temperature compared to a conventional composite transistor. The
proposed homostructure transistors are designed to operate in terminal stages of power
amplifiers, radio transmitting devices, electronic equipment of industrial and automotive
electronics.
В статье приведены экспериментальные результаты и компьютерного
моделирования многокаскадных составных транзисторов. Для исследования, вольт -амперных характеристик многокаскадных составных транзисторов разработана
диалоговая компьютерная моделирующая программа среда программирования Delphi.
Показано, что предлагаемые многокаскадные составные транзисторы позволяют
повысить технологичность при его промышленном изготовлении. Показано, что
многокаскадные гомосоставные транзисторы по схеме Дарлингтона и Шиклаи
устойчиво работают при значениях напряжения коллектор-эмиттер в пять раз более
высоких, чем в случае отдельно взятых транзисторов. Рассеиваемая на коллекторе
мощность в 3 раза превышает паспортное значение предельно допустимой мощности
составных транзисторов. Установлено, что эффективность метода стабилизации
тока эмиттера трехзвенного гомосоставного транзистора по сравнению с обычным
составным транзистором по напряжению в 7 раз больше, а по температуре на три
порядка больше. Предложенные гомосоставные транзисторы предназначены для
работы в оконечных каскадах усилителей мощности, радиопередающих устройствах,
электронном оборудовании промышленной и автомобильной электронике.
| № | Author name | position | Name of organisation |
|---|---|---|---|
| 1 | Yarmukhamedov A.A. | dotsent | TDTU |
| 2 | Zhabborov A.B. | asistent | TDTU |
| 3 | Turimbetov B.M. | Bugalter | TDTU |
| № | Name of reference |
|---|---|
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