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Name 2020, том 2, выпуск 3
Journal Физика полупроводников и микроэлектроника
Volume Number 2
Published At 25/06/2020
Pages 70
Issue Number 3
Total number 6
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ABOUT THE CHARACTERISTICS OF MULTILAYER THIN-FILM STRUCTURES WITH DYES BASED ON TITANIUM DIOXIDE

Физика полупроводников и микроэлектроника

Ingliz 46-49 169 0

THE INFLUENCE OF EXTERNAL FACTORS ON PROPERTIES OF IRRADIATED SILICON MIS STRUCTURES

Физика полупроводников и микроэлектроника

Ingliz 50-52 384 0

INFLUENCE OF THE GAMMA IRRADIATION ONTO IV CURVE OF THE SURFACE BARRIER METALL-SEMICONDUCTOR STRUCTURES WITH MICRO-TEXTURED INTERFACE

Физика полупроводников и микроэлектроника

Ingliz 53-55 188 0

STUDY OF STRUCTURAL DISORDERING OF SILICON IONIC IMPLANTED WITH MANGANESE BY THE METHOD OF COMBINATION LIGHT SCATTERING (RS).

Физика полупроводников и микроэлектроника

Ingliz 56-59 206 0

THE EFFICIENCY OF SOLAR DRYERS

Физика полупроводников и микроэлектроника

Ingliz 60-63 189 0