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Publisher info
Name:OʻzMU huzuridagi Yarimoʻtkazgichlar fizikasi va mikroelektronika ITI
Address:100057, Toshkent sh., Olmazor tum., Yangi Olmazor koʻchasi, 20 uy.
Phone: +998 71 248 79 94
Email: ispm_uz@mail.ru
| Name | 2020, том 2, выпуск 4 | ||
| Journal | Физика полупроводников и микроэлектроника | ||
| Volume Number | 2 | ||
| Published At | 25/08/2020 | ||
| Pages | 69 | ||
| Issue Number | 4 | ||
| Total number | 6 | ||
| File | |||
| The full name of the article | Language | Pages | View count | Read count |
|---|---|---|---|---|
|
Физика полупроводников и микроэлектроника |
Ingliz | 48-51 | 358 | 0 |
|
POSSIBILITIES OF USING HIGHLY COMPENSATED SILICON IN ELECTRONICS Физика полупроводников и микроэлектроника |
Ingliz | 52-54 | 331 | 0 |
|
INFLUENCE OF HIGH RADIATION DOSES ON THE BEHAVIOR OF TRANSITION ELEMENT IMPURITIES IN SILICON Физика полупроводников и микроэлектроника |
Ingliz | 55-58 | 256 | 0 |
|
CIRCUIT SIMULATION OF RADIATION-SENSITIVE PARAMETERS OF THE OPERATIONAL AMPLIFIER LM358 Физика полупроводников и микроэлектроника |
O'zbek | 59-62 | 159 | 0 |
|
Физика полупроводников и микроэлектроника |
Ingliz | 63-66 | 474 | 0 |