В работе рассмотрено влияние скоплений примесных атомов никеля на структуру монокристаллического кремния. С помощью метода электронно-зондового микроанализа изучены типичные свойства дислокационных линий, образующихся вокруг скоплений примесных атомов никеля в кремнии.
The effect of clusters of nickel impurity atoms on the structure of single-crystal silicon is considered. Using the electron probe microanalysis method, the typical properties of dislocation lines formed around clusters of nickel impurity atoms in silicon are studied.
№ | Муаллифнинг исми | Лавозими | Ташкилот номи |
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1 | Turgunov N.. | ||
2 | Zainabidinov S.Z. | ||
3 | Akbarov S.. | ||
4 | Berkinov E.. |
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