The lifetime of non-equilibrium photo generated charge carriers in the thin-film CIGS-based solar cell was determined under illumination with monochromatic radiation of different wavelengths (λ ≈ 395 nm, 460 nm, 630 nm, 900 nm). It was found that the lifetime of nonequilibrum charge carriers generated charge carriers depends on the absorption coefficient and radiation intensity.
The lifetime of non-equilibrium photo generated charge carriers in the thin-film CIGS-based solar cell was determined under illumination with monochromatic radiation of different wavelengths (λ ≈ 395 nm, 460 nm, 630 nm, 900 nm). It was found that the lifetime of nonequilibrum charge carriers generated charge carriers depends on the absorption coefficient and radiation intensity.
Время жизни неравновесных фотогенерированных носителей заряда в тонкопленочном солнечном элементе на основе CIGS определялось при освещении монохроматическими излучениями с различными длинами волн (λ ≈ 395 нм, 460 нм, 630 нм, 900 нм). Установлено, что время жизни фотогенерированных носителей заряда зависит от коэффициента поглощения и интенсивности излучения.
| № | Муаллифнинг исми | Лавозими | Ташкилот номи |
|---|---|---|---|
| 1 | Kabulov R.. | ||
| 2 | Akbarov F.. |
| № | Ҳавола номи |
|---|---|
| 1 | Sze S.M. & Kwok K.Ng. Physics of Semiconductor Devices. - Hoboken, New Jersey, John Willey and Sons, Inc., 2007. – 763 p |
| 2 | Milichko V.A. , et.al. Solar Photovoltaics: Current State and Trends // Uspekhi Fizicheskikh Nauk. – 2016. - № 186(8). – SS. 801-852. |
| 3 | Novikov G.F., Gapanovich M.V. Third generation Cu-In-Ga-(S,Se) based solar inventers // Uspekhi Fizcheskikh Nauk. - 2017. - № 187(2). – SS. 173-191. |
| 4 | Green M. A. Solar Cells: Operating Principles, Technology and System Application - University of New South Wales, 1992 |
| 5 | Mirsagatov Sh. A., Kabulov R. R. and Makhmudov M. A.. Injection Photodiode Based on an n-CdS/p-CdTe Heterostructure // Semiconductors. – 2013. - Vol.47(6), PP. 825–830. |