Study the residual effects after all-round hydrostatic pressure (AHP) of the original
and doped with nickel and gadolinium silicon samples, and study the effect of all-round
hydrostatic compression on the relaxation characteristics of metal-semiconductor structures
fabricated based on crystalline silicon with different resistivity. It has been shown that in n-Si with
AHP up to 40 kbar will not change the peaks of oxygen and carbon
absorption, while in n-Si<Ni> at P≥30 kbar, the oxygen and carbon absorption peaks gradually
decrease and completely disappear at pressure of P=55 kbar; in n-Si<Gd>, the absorption spectra
turned out to be more resistant to external pressure.
In the range from 12 kbar to 38 kbar, n-Si<Ni> sample under the influence of pressure had
nonmonotonic change in resistivity, with the formation of a maximum at P ≥ 35 kbar, which is
associated with impurity precipitates by two acceptor levels (Ev+0.2 eV and Ec–0.4 eV). The
experimentally observed non-monotonicity in the dependences ρ=f (P) is consequence of two
counter processes. Mechanical stresses that stimulate the gettering of thermal defects from the
bulk of the semiconductor or impurities localized in the metal-semiconductor transition layer and
interacting with surface states can be responsible for changing the properties of the interface
under pressure.
Study the residual effects after all-round hydrostatic pressure (AHP) of the original
and doped with nickel and gadolinium silicon samples, and study the effect of all-round
hydrostatic compression on the relaxation characteristics of metal-semiconductor structures
fabricated based on crystalline silicon with different resistivity. It has been shown that in n-Si with
AHP up to 40 kbar will not change the peaks of oxygen and carbon
absorption, while in n-Si<Ni> at P≥30 kbar, the oxygen and carbon absorption peaks gradually
decrease and completely disappear at pressure of P=55 kbar; in n-Si<Gd>, the absorption spectra
turned out to be more resistant to external pressure.
In the range from 12 kbar to 38 kbar, n-Si<Ni> sample under the influence of pressure had
nonmonotonic change in resistivity, with the formation of a maximum at P ≥ 35 kbar, which is
associated with impurity precipitates by two acceptor levels (Ev+0.2 eV and Ec–0.4 eV). The
experimentally observed non-monotonicity in the dependences ρ=f (P) is consequence of two
counter processes. Mechanical stresses that stimulate the gettering of thermal defects from the
bulk of the semiconductor or impurities localized in the metal-semiconductor transition layer and
interacting with surface states can be responsible for changing the properties of the interface
under pressure.
| № | Муаллифнинг исми | Лавозими | Ташкилот номи |
|---|---|---|---|
| 1 | Zaynabidinov S.Z. | teacher | Andijan State University |
| 2 | Turayev A.P. | teacher | Tashkent branch Moscow power engineering institute |
| 3 | Ibragimov S.B. | teacher | TSTU |
| 4 | Elmurotova D.B. | teacher | TSTU |
| 5 | Saydimov Y.A. | functionary | Institute of semiconductor physics and microelectronics |
| 6 | Saparov F.A. | functionary | Institute of semiconductor physics and microelectronics |
| № | Ҳавола номи |
|---|---|
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