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Thin metal-oxide layers of ZnO on the silicon substrate obtained by spray pyrolysis and optimal technological modes determined. It was determined that, obtained ZnO films based on silicon have a hexagonal syngony, a wurzite structure with lattice parameters, а = 0.3265 nm and c = 0.5212 nm, with block sizes of 67 nm.

  • Название журнала
  • Номер выпуска
  • Количество просмотров 432
  • Ссылка в интернете
  • DOIdoi.org/10.47100/conference_physics/S2_5
  • Дата создание в систему UzSCI 14-08-2020
  • Количество прочтений 321
  • Дата публикации
  • Язык статьиO'zbek
  • Страницы37-43
Русский

Получены тонкие металлооксидные слои ZnO на подложке кремния, методом спрей-пиролиза и определены оптимальные технологические режимы. Обнаружены, что полученные пленки ZnO на основе кремния имеют гексагональную сингонию, типа вюрцитная структура с параметрами решетки, а = 0.3265 нм и c = 0.5212 нм, с размерами блоков 67 нм.

Ўзбек

Thin metal-oxide layers of ZnO on the silicon substrate obtained by spray pyrolysis and optimal technological modes determined. It was determined that, obtained ZnO films based on silicon have a hexagonal syngony, a wurzite structure with lattice parameters, а = 0.3265 nm and c = 0.5212 nm, with block sizes of 67 nm.

№ Имя автора Должность Наименование организации
1 Boboev A.Y.
2 Rembeza S..
3 Men'shikova T..
4 Svistova T..
№ Название ссылки
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7 S. Lee, Y. H. Im and Y. -B. Hahn, "Two-Step Growth of ZnO Films on Silicon by Atomic Layer Deposition," Korean Journal of Chemical Engineering, Vol. 22, No. 2, pp. 334-338, Jan., 2005.
8 F. Yakuphanoglu, et al, "ZnO/p-Si heterojunction photodiode by sol-gel deposition of nanostructure n-ZnO film on p-Si substrate," Material Science in Semiconductor Processing, Vol. 13, No. 3, pp. 137-140, Sep., 2010.
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