The surface photoconductivity in a semi-infinite multivalley semiconductor has been theoretically researched.The calculation has been carried out by mirror reflection of electrons o’er the surface in the approximationof the Boltzmann kinetic equation.
Кўп воҳали яримчексиз яримўтказгичнинг сирт фотоўтказувчанлиги ҳисобланган. Бунда ток ташувчиларнинг сиртдан кўзгули сочилиши эътиборга олинган бўлиб, Больцманнинг кинетик тенгламасига кўра ҳисобланган.
Рассчитана поверхностная фотопроводимость многодолинного полубесконечного полупроводника. Расчет проведен при зеркальном рассеянии электронов о поверхность в приближении кинетического уравнения Больцмана.
The surface photoconductivity in a semi-infinite multivalley semiconductor has been theoretically researched.The calculation has been carried out by mirror reflection of electrons o’er the surface in the approximationof the Boltzmann kinetic equation.
| № | Имя автора | Должность | Наименование организации |
|---|---|---|---|
| 1 | Rasulov V.R. | Farg'ona davlat universiteti | |
| 2 | Rasulov R.Y. | Qo`qon davlat pedagogika instituti | |
| 3 | Eshboltayev I.M. | Andijon davlat universiteti | |
| 4 | Mamadaliyeva N.Z. | Andijon davlat universiteti | |
| 5 | Karimov I.N. | Andijon davlat universiteti |
| № | Название ссылки |
|---|---|
| 1 | 1. Green R.F. Transfer and scattering at the crystal surface. In the book: New in the study of a surface solid body. - M .: Mir. -1977. -Р. 104 - 154. 2. Normantas E., Picus G.E. Surface photovoltaic effects in multivalley semiconductors// Phys. Sol. Stat. -1986. -№ 6. -Р. 1665 – 1679. 3. Ivchenko E.L., Pikus G.E. Superlattices and other Heterosructures. Symmetry and optical Phenomena// Springer Verlag. 1sted. -1995, 2nded. -1997. 4. Uchibori Yuki, Chuman Hiroki, Hayashi Hiromitsu. Piezoelectric photothermal and surface photo-voltage studies of carrier recombination mechanism at interface of Si p_-n junction//Jap. J. Appl. Phys. -2008. -No: 7. –P.13267-13271. 5. Shinji Tokudomi, Junpei Azuma, Kazutoshi Takahashi, and Masao Kamada. Ultrafast Time Dependence of Surface Photo-Voltage Effect on p-Type GaAs(100) Surface //J. Phys. Soc. Jap. -2008. -No: 1. P.1678-1684. 6. Kavaliauskas J., Krivait G., echavi ius B., Valu is G., Seliuta D., Sherliker B., Halsall M., Harrison P., Linfield E., Stee M. Differential surface photovoltage spectroscopy of -doped GaAs/AlAs multiple quantum wells below and close to Mott transition// Phys. Stat. Sol.B. -2008. -No: 1. P.13654-13659. |