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FEATURES OF SILICON p-n STRUCTURES WITH A LARGE SENSITIVE SURFACE AND A VOLUME CHARGE AREA
Bosh sahifa
Maqolalar
FEATURES OF SILICON p-n STRUCTURES WITH A LARGE SENSITIVE SURFACE AND A VOLUME CHARGE AREA
280
Jurnal nomi
Физика полупроводников и микроэлектроника
Nashr soni
2020, том 2, выпуск 3
Ko'rishlar soni
280
Internet havola
https://uzjournals.edu.uz/semiconductors/vol2/iss3/5/
DOI
UzSCI tizimida yaratilgan sana
27-03-2022
O'qishlar soni
0
Nashr sanasi
25-06-2020
Asosiy til
Ingliz
Sahifalar
23-26
Kalit so'z
Annotatsiyalar
Mualliflar
Foydalanilgan adabiyotlar
Hujjatni onlayn ko'rish
№
Muallifning F.I.Sh.
Lavozimi
Tashkilot nomi
1
Muminov R.A.
scienstist
Physical-Technical Institute SPA “Physics-Sun” of ASUz
№
Havola nomi
Kutilmoqda