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Jurnallar
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Maqolalar
Yangiliklar
O'zbek
Русский
Ingliz tili
Kirish
DEFECT STRUCTURE OF SILICON WITH AN IMPURITY OF TUNGSTEN UNDER THE INFLUENCE OF EXTERNAL FACTORS
Bosh sahifa
Maqolalar
DEFECT STRUCTURE OF SILICON WITH AN IMPURITY OF TUNGSTEN UNDER THE INFLUENCE OF EXTERNAL FACTORS
397
Jurnal nomi
Физика полупроводников и микроэлектроника
Nashr soni
2020, том 2, выпуск 3
Ko'rishlar soni
397
Internet havola
https://uzjournals.edu.uz/semiconductors/vol2/iss3/9/
DOI
UzSCI tizimida yaratilgan sana
27-03-2022
O'qishlar soni
0
Nashr sanasi
25-06-2020
Asosiy til
Ingliz
Sahifalar
40-42
Kalit so'z
Annotatsiyalar
Mualliflar
Foydalanilgan adabiyotlar
Hujjatni onlayn ko'rish
№
Muallifning F.I.Sh.
Lavozimi
Tashkilot nomi
1
Daliev S.K.
scienstist
Semiconductor Physics and Microelectronics Research Institute
№
Havola nomi
Kutilmoqda