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Jurnallar
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Maqolalar
Yangiliklar
O'zbek
Русский
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Kirish
STUDY OF STRUCTURAL DISORDERING OF SILICON IONIC IMPLANTED WITH MANGANESE BY THE METHOD OF COMBINATION LIGHT SCATTERING (RS).
Bosh sahifa
Maqolalar
STUDY OF STRUCTURAL DISORDERING OF SILICON IONIC IMPLANTED WITH MANGANESE BY THE METHOD OF COMBINATION LIGHT SCATTERING (RS).
187
Jurnal nomi
Физика полупроводников и микроэлектроника
Nashr soni
2020, том 2, выпуск 3
Ko'rishlar soni
187
Internet havola
https://uzjournals.edu.uz/semiconductors/vol2/iss3/13/
DOI
UzSCI tizimida yaratilgan sana
27-03-2022
O'qishlar soni
0
Nashr sanasi
25-06-2020
Asosiy til
Ingliz
Sahifalar
56-59
Kalit so'z
Annotatsiyalar
Mualliflar
Foydalanilgan adabiyotlar
Hujjatni onlayn ko'rish
№
Muallifning F.I.Sh.
Lavozimi
Tashkilot nomi
1
Arzikulov E..
scienstist
Samarkand State University
№
Havola nomi
Kutilmoqda