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Yarimoʻtkazgichlar fizikasi va mikroelektronika
Jurnal
Yarimoʻtkazgichlar fizikasi va mikroelektronika
Jurnalga o‘tish
Nashr muqovasi

2020, том 2, выпуск 4

Chiqarilgan sana
25 Avgust 2020
Jild
2
Son
№4
ISSN
2181-9947

Tegishli maqolalar

Jami: 16 ta
1

PHOTOELECTRIC MEASUREMENTS OF SELENIUM DOPED SILICON

Yarimoʻtkazgichlar fizikasi va mikroelektronika
ROI: https://eroi.uz/11.0066/A0322-0009
DOI:Mavjud emas
calendar28 Mart 2022
view35
2

THE INFLUENCE OF THE MICROWAVE FIELD ON THE CHARACTERISTICS OF THE p-n JUNCTION

Yarimoʻtkazgichlar fizikasi va mikroelektronika
ROI: https://eroi.uz/11.0066/A0322-0006
DOI:Mavjud emas
calendar28 Mart 2022
view28
3

CIRCUIT SIMULATION OF RADIATION-SENSITIVE PARAMETERS OF THE OPERATIONAL AMPLIFIER LM358

Yarimoʻtkazgichlar fizikasi va mikroelektronika
ROI: https://eroi.uz/11.0066/A0322-0011
DOI:Mavjud emas
calendar28 Mart 2022
view27
4

INFLUENCE OF HIGH RADIATION DOSES ON THE BEHAVIOR OF TRANSITION ELEMENT IMPURITIES IN SILICON

Yarimoʻtkazgichlar fizikasi va mikroelektronika
ROI: https://eroi.uz/11.0066/A0322-0021
DOI:Mavjud emas
calendar28 Mart 2022
view26
5

NEW ENERGY AND RESOURCE SAVING TECHNOLOGIES FOR PRODUCING SILICON AND ITS ALLOYS

Yarimoʻtkazgichlar fizikasi va mikroelektronika
ROI: https://eroi.uz/11.0066/A0322-0017
DOI:Mavjud emas
calendar28 Mart 2022
view32
6

THE POSITIVE FEEDBACK AMPLIFICATION MECHANISM OF THE INJECTION PHOTODIODE BASED ON LARGE-BLOCK CdTe FILMS

Yarimoʻtkazgichlar fizikasi va mikroelektronika
ROI: https://eroi.uz/11.0066/A0322-0010
DOI:Mavjud emas
calendar28 Mart 2022
view30
7

CRITERIA FOR OBTAINING COMPENSATED NICKEL SILICON

Yarimoʻtkazgichlar fizikasi va mikroelektronika
ROI: https://eroi.uz/11.0066/A0322-0018
DOI:Mavjud emas
calendar28 Mart 2022
view29
8

IMPROVING THE PHOTOELECTRIC CHARACTERISTICS OF THIN-FILM SOLAR CELLS THE BASED CDTE BY DOPING WITH COPPER THE BASE LAYER OF CADMIUM TELLURIDE

Yarimoʻtkazgichlar fizikasi va mikroelektronika
ROI: https://eroi.uz/11.0066/A0322-0022
DOI:Mavjud emas
calendar28 Mart 2022
view25
9

RESEARCH OF PHOTOELECTRIC PROPERTIES OF A GAS DISCHARGE CELL WITH PHOTOELECTRODES BASED ON GALLIUM ARSENIDE AND SILICON WITH PLASMA CONTACTS

Yarimoʻtkazgichlar fizikasi va mikroelektronika
ROI: https://eroi.uz/11.0066/A0322-0012
DOI:Mavjud emas
calendar28 Mart 2022
view25
10

INVESTIGATION OF DEFECT FORMATION PROCESSES IN SILICON WITH IRON IMPURITY

Yarimoʻtkazgichlar fizikasi va mikroelektronika
ROI: https://eroi.uz/11.0066/A0322-0004
DOI:Mavjud emas
calendar28 Mart 2022
view32