28 Oktabr 2020
71Main language:Russian
ДАТЧИКИ СКОРОСТИ ПОТОКА СПЛОШНЫХ СРЕД
Field of Science:
file.pdf
ARTICLE ANNOTATION
The design features of a thermoanemometric sensor based on silicon with nanoclusters of Nickel atoms, which has high sensitivity and stability of output parameters, are considered. Their electrophysical parameters are studied depending on the type of continuous media.
AUTHORS
S.Nasriddinov
НИИ физики полупроводников и микроэлектроники при НУУЗ
D.Esbergenov
НИИ физики полупроводников и микроэлектроники при НУУЗ
Tags
# чувствительность# sensitivity# sensor# диффузия# легирование# температура# flow# поток# temperature# diffusion# silicon# датчик# alloying# кремний# nickel# никел
OTHER ARTICLES IN THIS JOURNAL
- DETERMINING THE LIFETIME OF MINORITY CHARGE CARRIERS AND IRON IMPURITY CONCENTRATION IN SEMICONDUCTOR STRUCTURES WITH SUBMICRON LAYERS
Semiconductor Physics and Microelectronics · 28 Mart 2022
- THE POSITIVE FEEDBACK AMPLIFICATION MECHANISM OF THE INJECTION PHOTODIODE BASED ON LARGE-BLOCK CdTe FILMS
Semiconductor Physics and Microelectronics · 28 Mart 2022
- INVESTIGATION OF RECOMBINATIONAL PROCESSES THROUGH PHOTOELECTRIC CONDUCTIVITY OF THE FILM OF HYDROGENATED AMORPHOUS SILICON AND ITS MODIFICATION
Semiconductor Physics and Microelectronics · 28 Mart 2022
- INVESTIGATION OF DEFECT FORMATION PROCESSES IN SILICON WITH IRON IMPURITY
Semiconductor Physics and Microelectronics · 28 Mart 2022
- PHOTOELECTRIC MEASUREMENTS OF SELENIUM DOPED SILICON
Semiconductor Physics and Microelectronics · 28 Mart 2022
- STRUCTURAL FEATURES OF THE THIN-FILM N-ZnO/P-Si HETEROJUNCTION
Semiconductor Physics and Microelectronics · 28 Mart 2022
Rate Article
0
5
4
3
2
1
Article Identifiers
DOI:
Not Available
References
Яримўтказгичлар физикаси ва микроэлектроника