27 Mart 2022
29Main language:English
DEFECTS FORMATION IN SILICON DOPE D WITH YTTERBIUM AND IRRADIATED BY ELECTRONS
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ARTICLE ANNOTATION
In this work, the effect of ytterbium impurity on the formation of radiation defects under electron irradiation is investigated. It is shown that the presence of ytterbium atoms slowsdown the process of radiation defect formation: the concentration of A–and E–centers in the n-Si samples is much lower than in the controlsamples. It was found that the efficiency of the formation of radiation defects depends on the concentration of the Yb impurity, its state in the lattice, and the content of oxygen atoms in silicon
AUTHORS
SH.Daliev
Semiconductor Physics and Microelectronics Research Institute
Tags
# diffusion# doping# deep level# ytterbium# :
silicon# irradiat
ion
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