STUDY OF THE EFFECT OF GAMMA RADIATION ON STATIC CHARACTERISTICS OF SILICON EPITAXIAL-PLANAR MEDIUM POWER DIODE

The research results of the current-voltage characteristics of silicon diode p+pnn+-structures pre-irradiated with fluencies of fast electronsare given, which showed that after heat treatment both the voltage drop at direct bias and the leakage currents of the diodes at reverse bias decrease, creating conditions for an increase in the impulse withstand power.