28 Sentabr 2024
29DASTURLANGAN LABARATORIYA ISHLARIDA YARIMOʻTKAZGICHLARNING TA’QIQLANGAN ZONA KENGLIGI TUSHUNCHASI
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X.Aslonov
Andijon davlat pedagogika instituti
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References
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2. Physical Models for Semiconductor Device Simulation. Andreas Schenk pp. 4-5
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4. S.C. Jain and D.J. Roulston, “A simple expression for band gap narrowing (BGN) in heavily doped Si, Ge, GaAs and GexSi1−x strained layers,” Solid-State Electronics, vol. 34, no. 5, pp. 453–465, 1991