7 Dekabr 2019
39Main language:Russian
ЛАЗЕРНАЯ ИНТРОСКОПИЯ КРЕМНИЕВЫХ ПЛАСТИН
Field of Science:
file.pdf
ARTICLE ANNOTATION
The possibility of detection of defects in silicon wafers by Fourier analysis of digital images obtained by laser introscopy is shown
AUTHORS
Z.Azamatov
НИИ физики полупроводников и микроэлектроники при НУУЗ
I.Kulagin
K.Abdurakhmanov
N.Akbarova
Tags
# интроскопия# Фурье анализ# дефект# кремниевая пластина# defect# introscopy# Fourier analysis# silicon plate
OTHER ARTICLES IN THIS JOURNAL
- DETERMINING THE LIFETIME OF MINORITY CHARGE CARRIERS AND IRON IMPURITY CONCENTRATION IN SEMICONDUCTOR STRUCTURES WITH SUBMICRON LAYERS
Semiconductor Physics and Microelectronics · 28 Mart 2022
- THE POSITIVE FEEDBACK AMPLIFICATION MECHANISM OF THE INJECTION PHOTODIODE BASED ON LARGE-BLOCK CdTe FILMS
Semiconductor Physics and Microelectronics · 28 Mart 2022
- INVESTIGATION OF RECOMBINATIONAL PROCESSES THROUGH PHOTOELECTRIC CONDUCTIVITY OF THE FILM OF HYDROGENATED AMORPHOUS SILICON AND ITS MODIFICATION
Semiconductor Physics and Microelectronics · 28 Mart 2022
- INVESTIGATION OF DEFECT FORMATION PROCESSES IN SILICON WITH IRON IMPURITY
Semiconductor Physics and Microelectronics · 28 Mart 2022
- PHOTOELECTRIC MEASUREMENTS OF SELENIUM DOPED SILICON
Semiconductor Physics and Microelectronics · 28 Mart 2022
- STRUCTURAL FEATURES OF THE THIN-FILM N-ZnO/P-Si HETEROJUNCTION
Semiconductor Physics and Microelectronics · 28 Mart 2022
Rate Article
0
5
4
3
2
1
Article Identifiers
DOI:
Not Available
References
Физика полупроводников и микроэлектроника