26 Dekabr 2019
33Main language:Russian
ИССЛЕДОВАНИЕ ДЕГРАДАЦИИ СИЛОВЫХ ДИОДОВ С БАРЬЕРОМ ШОТТКИ ПРИ ВОЗДЕЙСТВИЯ -КВАНТАМИ 60Сo
Field of Science:
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ARTICLE ANNOTATION
The study concerns resistance to gamma-radiation damage of the power Schottky diodes Cr-Si. These diodes demonstrate parameters stability in the wide range of irradiation doses. Also radiation-induced shift of the non-ideality factor n had been revealed
AUTHORS
M.Tagaev
Каракалпакский государственный университет им. Бердаха, г. Нукус
B.Abdikamalov
Каракалпакский государственный университет им. Бердаха, г. Нукус
V.Statov
Каракалпакский государственный университет им. Бердаха, г. Нукус
S.Bekbergenov
Каракалпакский государственный университет им. Бердаха, г. Нукус
Tags
# надежность# silicon# reliability# кремний# барьер Шоттки# радиационные дефекты# Schottky barrier# gamma irradiation
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Article Identifiers
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References
Физика полупроводников и микроэлектроника