10 Fevral 2020
23Main language:Russian
КРЕМНИЕВЫЙ СОЛНЕЧНЫЙ ЭЛЕМЕНТ С МАЛЫМИ Р-N ПЕРЕХОДАМИ
Field of Science:
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ARTICLE ANNOTATION
A model of p-n transition of micron size grown on a solar cell (SС) substrate from low-cost stable technical (or metallurgical) silicon is proposed. These SС with p-n transitions of micron size are particularly effective in the process of mass production of solar electricity, when the SE is constantly in aggressive climatic conditions
AUTHORS
R.Muminov
НПО “Физика-Солнце” АН РУз
E.Imamov
Ташкентский университет информационных технологий
T.Djalalov
Ташкентский университет информационных технологий
K.Karimov
Ташкентский университет информационных технологий
Tags
# эффективность# efficiency# Defect-free area# technical silicon# p-n junction# illuminated surface# Бездефектная область# технический кремний# р-n переход# освещенная поверхность
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References
Яримўтказгичлар физикаси ва микроэлектроника