Ikkilamchi ionlar mass-spektrometriyasi (VIMS) usuli yordamida Nb sirtini Xe+ ionlari bilan bombardimon qilish natijasida hamda kameraga kislorod ionlarini kiritish vaqtidagi yuzaga keladigan NbnOm+ metallik klasterlarining emissiyasi va fragmentaciyasi jarayonlari o‘rganilgan. NbnOm+ klasterlarining hosil bo‘lishi jarayoni kombinatorli sintez mehanizmi yordamida tushuntiriladi. Ikkilamchi ionlar mass-spektrometriyasi (VIMS) usuli yordamida Nb sirtini Xe+ ionlari bilan bombardimon qilish natijasida olingan natijalar bilan kelajakda nanotehnalogiya yanada rivojlanishiga olib keladi.
Ikkilamchi ionlar mass-spektrometriyasi (VIMS) usuli yordamida Nb sirtini Xe+ ionlari bilan bombardimon qilish natijasida hamda kameraga kislorod ionlarini kiritish vaqtidagi yuzaga keladigan NbnOm+ metallik klasterlarining emissiyasi va fragmentaciyasi jarayonlari o‘rganilgan. NbnOm+ klasterlarining hosil bo‘lishi jarayoni kombinatorli sintez mehanizmi yordamida tushuntiriladi. Ikkilamchi ionlar mass-spektrometriyasi (VIMS) usuli yordamida Nb sirtini Xe+ ionlari bilan bombardimon qilish natijasida olingan natijalar bilan kelajakda nanotehnalogiya yanada rivojlanishiga olib keladi.
The emission and fragmentation dependencies of NbnOm+ clusters sprayed from the niobium surface with Xe+ ions at the oxygen pressure at the bombarded surface were examined using the secondary ion mass spectrometry process. It has been shown that the process of NbnOm+ cluster formation at ion spraying can be defined within the context of combinatorial synthesis mechanism, taking into account the mutual reversibility of formation reactions and monomolecular decomposition. The received data testify that at ionic spraying generation of heteronuclear clusters of various stoichiometries is possible. The study in the same experiments of the fragmentation of the atomized clusters and measurement of the energy spectra of fragmented ions also allows you to determine the dissociation energies of the cluster structures in a single experiment, which greatly expands the possibilities of VIMS to solve the problems of modern nanotechnology.
В статье рассмотрены результаты исследования методом вторично-ионной масс-спектрометрии зависимости эмиссии и фрагментации кластеров NbnOm+, распыленных ионами Xe+ с поверхности ниобия, от давления кислорода вблизи бомбардируемой поверхности. Показано, что с учетом взаимной обратимости реакций образования и мономолекулярного распада процесс образования кластеров NbnOm+ при ионном распылении может быть описан в рамках механизма комбинаторного синтеза. Полученные данные свидетельствуют, что при ионном распылении возможна генерация гетероядерных кластеров различной стехиометрии. Результаты исследования в тех же экспериментах фрагментации распыленных кластеров и измерения спектров энергий фрагментных ионов позволяют также в рамках одного эксперимента определить энергии диссоциации кластерных структур, что значительно расширяет возможности ВИМС для решения задач современных нанотехнологий.
| № | Author name | position | Name of organisation |
|---|---|---|---|
| 1 | Khojiev S.. | Katta uqtuvchi | TDTU |
| 2 | Tashmukhamedova D.. | dotsent | TDTU |
| 3 | Rakhimov I.T. | Doctorant | TDTU |
| 4 | Gulbekov H.B. | magistr | TDTU |
| № | Name of reference |
|---|---|
| 1 | 1. Djemilov H.X. Statistical Mechanism of the Formation of the Energy Spectra of Sputtered Molecular Clusters2012. № 8. С. 28-34; Journal of Surfase Investigation. X-ray, Synchrotron and Neutron Techniques., 2012.V.6.№4.Р. 654-659. 2. Wucher A. Mat. Fys. Medd. Dan. Vidensk. Selsk. 2006. V. 52. P. 405. 3. Urbassek H.M. Hofer W.O. // Mat. Fys. Medd. Dan. Vidensk. Selsk. 1993. V. 43. P. 97. 4. Bekkerman А.D. Веrеvkin I.B. Verxoturov S.V. Дjеmilev, H.X. Маksimov S.E. Sоlоmkо.V.V. Izvestiya ran seriya fiz. 1996. Т. 60. №6. S. 121-127. 5. Djemilov H.X., Кovalenka S.F., Маksimov S.Е., Тukfatulillin О.F., Хоjiev SH.Т. Poverxnosti. Rentagen, Sinxrotr, i Neytron. Issled 2015. № 4. S. 89-94. 6. Deng H.N Kerns K.P. Jr. Castelman A.W. Phys.Chem J: Mechanism of the Formation of the Energy Spectra of Sputtered Molecular Clusters on NbnOm+. 1996. V.100.P.1338-1339. 7. Bekkerman A.D., Dzhemilev N.Kh., Rotstein V.M. Surf. Interface. Anal. The differences in the yield dependences of Si2 ions with n =1—3 on the oxygen pressure.1990. V. 15. P 587-590. 8. Djemilov H.X., Кovalenka S.F., Маksimov S.Е., Хоjiev SH.Т. Kinetics and Mechanism of Gas-Phase Reactions. Poverxnosti. Rentagen., Sinxrotr., i Neytron. Issled. 2014. № 10. S. 108-112. 9. Poverxnosti. Rentagen., sinxrotr., i neytron. Issled Тukfatulillin О.F., Хоjiev SH.Т. V kn. On the Unimolecular Decay and Mechanism of Formation of Si+ Cluster Ions «Теzis daklodov ХLV mеjdnarodnoy Тulininovskoy po fizike chastis s kristallamii (Мoskiva 26 mаy-28 mаy 2015) » Моskvа 2015. S. 138. 10. Хоjiev SH.Т., Djemilov H.X., Кovalenka S.F., Маksimov S.Е. Тukfatulillin О.F., Study of The Formation And Unimolecular Fragmentation Nbn Om+..Uzbekistan fizicheskiy jurnal. 2010.Т.12. № 1-2. S. 96-102. 11. Маksimov.S.Е., Djemilov H.X.,., Кovalenka S.F., Тukfatulillin О.F., Хоjiev Sh.Т Izn. Ran. Sеr. fiz. 2014. Т. 78. № 6. S. 710-713. 12. Paul B. Zbar and Albert P. Malvino, Basic Electronics: Sputtering of solids by ion bombardment, in Sputtering by Particle Bombardment. A Text – Lab Manual, 5th edition, Tata McGraw-Hill Publisher, 2005. 13. Klots C.E and J.Chen // Phys. Energy distribution of Si n Om clusters. A Text – Lab Manual, 5th edition, Tata McGraw-Hill Publisher, 2006. 14. Urbassek H.M., Michl J.// nucl//instr. Meth: Investigation of the processes of the formation, emission and fragmentation of sputtered Si. 1995.B22.P 26-36. 15. Gerhard W.//Z.Phys., Surf. Invest.: X-ray, Synchrotron Neutron tech patterens in Nanotechnology. B22. P.31-39 (2014). 16. Moshfehg A.Z//J.Phys D. Surface investigation. x-ray, synchrotron and neutron techniques Vol. 9 No. 2. 2015. 17. Klots C.E and J.Chen. Phys: Studies of the dependences of the cluster Si+O2 ion yields and the intensities of their unimolecular decay on the oxygen. 1991.D21.P.335-342. 18. Castleman A.W.Jr., Bowen K.H.//J.Phys.CHem: Dependence of the O+, Si+, SiO1+, SiO2+, and SiO3+ ion yields on the О2 pressure. 1996.100. p. 1291-12944. 19. Wucher A., Wahl M. //Nucl.Instr. Meth.B: Investigation of the dependences of the emission and unimolecular fragmentation of sputtered silicon (Si) clusters. 1998.115. P. 581-589. |